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STAC9200

STMicroelectronics
Part Number STAC9200
Manufacturer STMicroelectronics
Description 32V HF to 1.3GHz LDMOS transistor
Published Mar 22, 2016
Detailed Description STAC9200 Datasheet 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package 1 1 2 3 3 STAC780-4B Pin connection ...
Datasheet PDF File STAC9200 PDF File

STAC9200
STAC9200

Overview
STAC9200 Datasheet 200 W, 32 V HF to 1.
3 GHz LDMOS transistor in a STAC package 1 1 2 3 3 STAC780-4B Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code STAC9200 Frequency 860 MHz VDD 32 V POUT 200 W Gain 16 dB Efficiency 60 % • Improved ruggedness: V(BR)DSS > 80 V • Load mismatch 65:1 all phases at 200 W, 32 V, 860 MHz, PW 1ms, DC = 10% • POUT = 200 W min.
(230 W typ.
) with 16 dB gain at 860 MHz • In compliance with the 2002/95/EC European directive • ST air-cavity STAC packaging technology Description The STAC9200 is a common source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for broadband applications in the HF to 1300 MHz frequency range.
The STAC9200 benefits from the latest generation of efficient STAC package technology.
Product status link STAC9200 Product summary Order code STAC9200 Marking STAC9200 Package STAC780-4B Packing Box DS9997 - Rev 4 - March 2020 For further information contact your local STMicroelectronics sales office.
www.
st.
com STAC9200 Electrical data 1 Electrical data Symbol V(BR)DSS VGS TJ TSTG Table 1.
Absolute maximum ratings Parameter Drain source voltage (TCASE = 25 °C) Gate-source voltage (TCASE = 25 °C) Maximum operating junction temperature Storage temperature range Value 80 ±20 200 -65 to +150 Unit V V °C °C Symbol RthJC Table 2.
Thermal data Parameter Junction-case thermal resistance Value 0.
525 Unit °C/W Symbol HBM Table 3.
ESD protection Test Methodology Human Body Model (per JESD22-A114) Class 2 DS9997 - Rev 4 page 2/14 STAC9200 Electrical characteristics 2 Electrical characteristics Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS Table 4.
Static (per side) Parameter Test conditions Drain - Source Breakdown voltage VGS = 0 V, IDS = 10 mA Zero gate voltage drain Leakage Current VGS = 0 V, VDS = 28 V Gate - Source leakage current VGS = 15 V, VDS = 0 V Gate quiescent voltage VDS = 10 V, ID = 250 mA ...


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