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STGB15M65DF2

STMicroelectronics

Trench gate field-stop IGBT


Description
STGB15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low loss Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 15 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel...



STMicroelectronics

STGB15M65DF2

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