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IRF8714PBF-1

International Rectifier
Part Number IRF8714PBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 23, 2016
Detailed Description VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 30 V 8.7 mΩ 8.1 nC 14 A IRF8714PbF-1 HEXFET® Power MOSFET ...
Datasheet PDF File IRF8714PBF-1 PDF File

IRF8714PBF-1
IRF8714PBF-1

Overview
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 30 V 8.
7 mΩ 8.
1 nC 14 A IRF8714PbF-1 HEXFET® Power MOSFET S1 AA 8D S2 7D S3 6D G4 5D Top View SO-8 Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF8714PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF8714PbF-1 IRF8714TRPbF-1 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Max.
30 ± 20 14 11 110 2.
5 1.
6 0.
02 -55 to + 150 Units V A W W/°C °C Thermal Resistance Parameter gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient Typ.
––– ––– Max.
20 50 Units °C/W Notes  through … are on page 9 1 www.
irf.
com © 2013 International Rectifier Submit Datasheet Feedback November 22, 2013 IRF8714PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current 30 ––– ––– ––– 1.
35 ––– ––– ––– 0.
021 7.
1 10.
9 1.
80 -6.
0 ––– ––– ––– 8.
7 13 2.
35 ––– 1.
0 V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA emΩ VGS = 10V, ID = 14A eVGS = 4.
5V, ID = 11A ...


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