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BUJ303B

Silicon Diffused Power Transistor

Description

DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Silicon Diffused Power Transistor Product specification BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic...

NXP

BUJ303B PDF File

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