DatasheetsPDF.com

IRFH7882PBF

International Rectifier
Part Number IRFH7882PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 24, 2016
Detailed Description VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) ID (@TC (Bottom) = 25°C) 80 3.1 49 0.9 180 V m nC  A   ...
Datasheet PDF File IRFH7882PBF PDF File

IRFH7882PBF
IRFH7882PBF

Overview
VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) ID (@TC (Bottom) = 25°C) 80 3.
1 49 0.
9 180 V m nC  A   FastIRFET™ IRFH7882PbF HEXFET® Power MOSFET   PQFN 5X6 mm Applications  Optimized for Secondary Side Synchronous Rectification  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Hot Swap and Active O-Ring  BLDC Motor Drive Features Low RDS(ON) (< 3.
1m) Low Thermal Resistance to PCB (<0.
64°C/W) 100% Rg Tested Low Profile (<1.
05 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1 Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFH7882PbF Package Type   PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH7882TRPbF Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range   Max.
± 20 26 180 114 290 4.
0 195 0.
03 -55 to + 150   Units V A W W/°C °C Notes  through  are on page 8 1 www.
irf.
com © 2015 International Rectifier Submit Datasheet Feedback May 5, 2015   IRFH7882PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage VGS(th) Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductan...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)