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IRFIZ24NPBF

International Rectifier
Part Number IRFIZ24NPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 24, 2016
Detailed Description Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully...
Datasheet PDF File IRFIZ24NPBF PDF File

IRFIZ24NPBF
IRFIZ24NPBF

Overview
Advanced Process Technology Isolated Package High Voltage Isolation = 2.
5KVRMS Sink to Lead Creepage Dist.
= 4.
8mm Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides ...


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