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PBHV2160Z

NXP
Part Number PBHV2160Z
Manufacturer NXP
Description NPN high-voltage low VCEsat (BISS) transistor
Published Mar 24, 2016
Detailed Description SOT223 PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1. Gene...
Datasheet PDF File PBHV2160Z PDF File

PBHV2160Z
PBHV2160Z

Overview
SOT223 PBHV2160Z 600 V, 0.
1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1.
General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV3160Z 2.
Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability • High collector current gain hFE at high IC 3.
Applications • Electronic ballast for fluorecent lighting • LED driver for LED chain module • LCD backlighting • HID front lighting • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4.
Quick reference data Table 1.
Symbol VCEO IC Quick reference data Parameter collector-emitter voltage collector current Conditions open base Min Typ Max Unit - - 600 V - - 0.
1 A Scan or click this QR code to view the latest information for this product NXP Semiconductors PBHV2160Z 600 V, 0.
1 A NPN high-voltage low VCEsat (BISS) transistor 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline 4 123 SC-73 (SOT223) Graphic symbol 2, 4 1 3 sym016 6.
Ordering information Table 3.
Ordering information Type number Package Name PBHV2160Z SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 7.
Marking Table 4.
Marking codes Type number PBHV2160Z Marking code HV216Z PBHV2160Z Product data sheet All information provided in this document is subject to legal disclaimers.
24 June 2015 © NXP Semiconductors N.
V.
2015.
All rights reserved 2 / 13 NXP Semiconductors PBHV2160Z 600 V, 0.
1 A NPN high-voltage low VCEsat (BISS) transistor 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VCBO collector-base voltage open emitter VCEO collector-emitter voltage open bas...


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