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PTVA030121EA

Part Number	PTVA030121EA
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Mar 25, 2016
Detailed Description	PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an L...
Datasheet	PTVA030121EA PDF File

Overview

PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band.
Features include high gain and a thermally-enhanced package.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA030121EA Package H-36265-2 Gain (dB) Drain Efficiency (%) CW Power Sweep VDD = 50 V, IDQ = 30 mA, ƒ = 450 MHz 28 26 Gain 24 22 20 18 16 14 31 Efficiency 33 35 37 39 Output Power (dBm) 41 90 80 70 60 50 40 30 3-1 20 43 Features • Unmatched input and output • Integrated ESD protection • Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-001) • High gain, low thermal resistance • Excellent ruggedness • Capable of withstanding a 13:1 load mismatch at 50 V, 12 W, CW conditions • Pb-free and RoHS compliant RF Characteristics CW Measuremen...

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PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET - Infineon

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