N-Channel MOSFET
Description
HFT1N60S
Dec 2009
HFT1N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.2 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)...
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