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HFI8N65U

Part Number	HFI8N65U
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Mar 26, 2016
Detailed Description	HFW8N65U_HFI8N65U HFW8N65U / HFI8N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugg...
Datasheet	HFI8N65U PDF File

Overview

HFW8N65U_HFI8N65U HFW8N65U / HFI8N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.
0 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested Jan 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 7.
5 A D2-PAK I2-PAK HFW8N65U HFI8N65U 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 7.
5 4.
7 30 ρ30 280 7.
5 15.
0 4.
5 Power Dissipation (TA = 25୅) * PD Power Dissipa...

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HFI8N65U N-Channel MOSFET - SemiHow

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