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MA3DF47

Panasonic
Part Number MA3DF47
Manufacturer Panasonic
Description Fast Recovery Diodes
Published Mar 27, 2016
Detailed Description Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ielt...
Datasheet PDF File MA3DF47 PDF File

MA3DF47
MA3DF47

Overview
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Fast Recovery Diodes (FRD) MA3DF47 Silicon mesa type For high frequency rectification For plasma display panel drive  Features  Super high speed switching characteristic (trr = 13 ns typ.
)  Soft recovery  Package  Code TO-220D-A1  Pin Name  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Repetitive peak reverse voltage VRRM Rating 370 Unit V 1: Anode 2: Cathode 3: Anode Non-repetitive peak reverse surge voltage *1 Forward current (Average) *2 VRSM IF(AV) 460 20 V A  Marking Symbol: MA3DF47 Repetitive peak forward current *3 Non-repetitive peak forward surge current *4 IFRM IFSM 150 100 A A  Internal Connection Junction temperature Tj 150 °C Storage temperature Tstg –40 to +150 °C 123 Note) *1: 60 Hz half-sine wave.
(If repeative, RMS voltage < 370 V) *2: TC = 25°C *3: Pulse width < 10 ms.
Peak value of the sine wave.
(If repeative, RMS current < 20 A) *4: 50 Hz sine wave 1 cycle (Non-repetitive peak current)  Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 20 A 1.
65 1.
85 V Reverse current Reverse recovery time * IRRM trr *1 trr *2 VRRM = 370 V IF = 0.
5 A, IR = 1.
0 A, Irr = 0.
25 A IF = 40 A, di/dt = –200 A/ms, Irr = IR × 0.
5 A 10 13 20 25 30 mA ns Thermal resistance (j-c) Rth(j-c) 3.
0 °C/W Thermal resistance (j-a) Rth(j-a) 63 °C/W Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
Absolute frequency of input and output is 10 MHz 3.
This product is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage...


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