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DMG4800LSD

Diodes

Dual N-Channel MOSFET


Description
Product Summary V(BR)DSS 30V RDS(on) max 16mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V ID max TA = +25°C 9.8A 8.4A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  Power Management ...



Diodes

DMG4800LSD

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