Power MOSFET
Description
IRF7904PbF-1
VDS RDS(on) max Q1 (@VGS = 10V) RDS(on) max Q2 (@VGS = 10V) Qg (typical) Q1 Qg (typical) Q2
ID(@TA = 25°C)Q1
ID(@TA = 25°C)Q2
30 V
16.2 mΩ
10.8
7.5 nC 14
7.6 A
11
G1 1 S2 2 S2 3 G2 4
HEXFET® Power MOSFET
8 D1 7 S 1 / D2 6 S 1 / D2 5 S 1 / D2
SO-8
Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers,
Graphics C...
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