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NP80N06DLD

Renesas
Part Number NP80N06DLD
Manufacturer Renesas
Description N-CHANNEL POWER MOS FET
Published Mar 28, 2016
Detailed Description PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N06CLD,NP80N06DLD,NP80N06ELD SWITCHING N-CHANNEL POWER M...
Datasheet PDF File NP80N06DLD PDF File

NP80N06DLD
NP80N06DLD

Overview
PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N06CLD,NP80N06DLD,NP80N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.
) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.
) (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2360 pF (TYP.
) • Built-in Gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP80N06CLD TO-220AB NP80N06DLD TO-262 NP80N06ELD TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 Gate to Source Voltage VGSS ±20 Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) ±80 ±210 Total Power Dissipation (TA = 25 °C) PT 1.
8 Total Power Dissipation (Tch = 25 °C) PT 100 Single Avalanche Current Single Avalanche Energy Note2 IAS TBD EAS TBD Channel Temperature Tch 175 Storage...


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