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A1873

Toshiba
Part Number A1873
Manufacturer Toshiba
Description 2SA1873
Published Mar 30, 2016
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1873 2SA1873 Audio Frequency General Purpose Amplifier ...
Datasheet PDF File A1873 PDF File

A1873
A1873

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1873 2SA1873 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE • Excellent hFE linearity: hFE (IC = −0.
1 mA)/hFE (IC = −2 mA) = 0.
95 (typ.
) • Complementary to 2SC4944 Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCBO VCEO VEBO IC IB PC (Note 1) −50 −50 −5 −150 −30 200 V V V mA mA mW Junction temperature Tj 125 °C JEDEC ― Storage temperature range Tstg −55~125 °C JEITA ― Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2L1A temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
Weight: 6.
2 mg (typ.
) operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating Marking Equivalent Circuit (top view) Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = −50 V, IE = 0 Emitter cut-off current IEBO VEB = −5 V, IC = 0 DC current gain hFE (Note) VCE = −6 V, IC = −2 mA Collector-emitter saturation voltage VCE (sat) IC = −100 mA, IB = −10 mA Transition frequency fT VCE = −10 V, IC = −1 mA Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz Note 2: hFE classification Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol 1 Min Typ.
Max ...


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