GaN HEMT
Description
PRELIMINARY
CGHV35060MP
60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz while the input matched transistor prov...
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