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CGHV35150

Cree
Part Number CGHV35150
Manufacturer Cree
Description GaN HEMT
Published Mar 31, 2016
Detailed Description CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) hig...
Datasheet PDF File CGHV35150 PDF File

CGHV35150
CGHV35150

Overview
CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.
9 - 3.
5 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange and pill package.
PNPa: CckGaHgVe3T5y1p5e0: F44/0C1G9H3V/3454105200P6 Typical Performance 3.
1 - 3.
5 GHz (TC = 85˚C) Parameter 3.
1 GHz 3.
2 GHz Output Power 180 180 Gain 13.
5 13.
5 Drain Efficiency 50 49 3.
3 GHz 180 13.
5 50 3.
4 GHz 170 13.
3 49 3.
5 GHz 150 12.
7 48 Note: Measured in the CGHV35150-AMP ap...


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