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CGHV35400F

Cree
Part Number CGHV35400F
Manufacturer Cree
Description GaN HEMT
Published Mar 31, 2016
Detailed Description CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a...
Datasheet PDF File CGHV35400F PDF File

CGHV35400F
CGHV35400F

Overview
CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.
9 - 3.
5 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440210.
PN: Package TCyGpHeV: 43450420105F Typical Performance Over 2.
9-3.
5 GHz (TC = 85˚C) of Demonstration Amplifier Parameter 2.
9 GHz 3.
2 GHz 3.
5 GHz Output Power 375 400 360 Gain 9.
8 10 9.
6 Drain Efficiency 66 59 57 Note: Measured in the CGHV35400F-AMP app...


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