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CGHV40050

Part Number	CGHV40050
Manufacturer	Cree
Description	GaN HEMT
Published	Mar 31, 2016
Detailed Description	CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mob...
Datasheet	CGHV40050 PDF File

Overview

CGHV40050 50 W, DC - 4.
0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz.
The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously.
It is a demonstration amplifier to showcase the CGHV40050’s high efficiency, high gain and wide bandwidth capabilities.
The device can be used for a range of applications from narrow band UHF, L and S Band as PPNac: CkaGgHeVT4y0p0e5s0: F44&0C19G3H&V4404005200P6 well as multi-octave bandwidth ampli...

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