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SDP05N50

SamHop Microelectronics
Part Number SDP05N50
Manufacturer SamHop Microelectronics
Description N-Channel MOSFET
Published Apr 1, 2016
Detailed Description Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP05N50 SDF05N50 Ver 2.3 PRODUCT S...
Datasheet PDF File SDP05N50 PDF File

SDP05N50
SDP05N50


Overview
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor SDP05N50 SDF05N50 Ver 2.
3 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 500V 5A 1.
35 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP05N50HZ TO-220 SDP05N50PZ TO-220 SDF05N50HZ TO-220F SDF05N50PZ TO-220F Marking Code SDP05N50 05N50 SDF05N50 05N50 Delivery Mode Tube Tube Tube Tube RoHS Status Halogen Free Pb Free Halogen Free Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP05N50 SDF05N50 VDS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ±30 ID Drain Current-Continuous a TC=25°C TC=100°C 5.
0 5.
0 3.
5 3.
5 IDM -Pulsed a 15 15 EAS Single Pulse Avalanche Energy c 40 PD Maximum Power Dissipation TC=25°C TC=100°C 83 28 42 14 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.
8 5.
4 °C/W 62.
5 62.
5 °C/W Details are subject to change without notice.
1 Dec,24,2013 www.
samhop.
com.
tw SDP05N50 SDF05N50 Ver 2.
3 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=400V , VGS=0V VGS= ±20V , VDS=0V 500 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=2.
5A VDS=20V , ID=2.
5A 2 DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=25V,VGS=0V f=1.
0MHz SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Del...



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