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2SA2153

ON Semiconductor
Part Number 2SA2153
Manufacturer ON Semiconductor
Description Bipolar Transistor
Published Apr 1, 2016
Detailed Description 2SA2153 Bipolar Transistor −50V, −2A, Low VCE(sat), PNP Single Features • Adoption of MBIT Process • Low Saturation Vol...
Datasheet PDF File 2SA2153 PDF File

2SA2153
2SA2153

Overview
2SA2153 Bipolar Transistor −50V, −2A, Low VCE(sat), PNP Single Features • Adoption of MBIT Process • Low Saturation Voltage • Large Current Capacity and Wide ASO Typical Applications • Voltage Regulators • Relay Drivers • Lamp Drivers • Electrical Equipment SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Unit Collector to Base Voltage VCBO −50 V Collector to Emitter Voltage VCEO −50 V Emitter to Base Voltage VEBO −6 V Collector Current IC −2 A Collector Current (Pulse) ICP −4 A Base Current Collector Dissipation IB (Note 2) Tc=25°C PC −400 mA 1.
3 W 3.
5 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Note 2 : Surface mounted on ceramic substrate(450mm2 × 0.
8mm) www.
onsemi.
com ELECTRICAL CONNECTION 2 1 : Base 1 2 : Collector 3 : Emitter 3 MARKING AZ LOT No.
12 3 SOT-89 / PCP-1 123 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016 1 April 2016 - Rev.
2 Publication Order Number : 2SA2153/D 2SA2153 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3) Parameter Symbol Conditions Value min typ Unit max Collector Cutoff Current ICBO VCB=−40V, IE=0A −1 μA Emitter Cutoff Current IEBO VEB=−4V, IC=0A −1 μA DC Current Gain hFE1 VCE=−2V, IC=−100mA 200 560 hFE2 VCE=−2V,IC=−1.
5A 40 Gain-Bandwidth Product fT VCE=−10V, IC=−300mA 420 MHz Output Capacitance Collector to Emitter Saturation Voltage Cob VCE(sat) VCB=−10V, f=1MHz IC=−1A, IB=−50mA 16 pF −0.
2 −0.
4 V Base to Emitter Saturation Voltage VBE(sat) IC=−1A, IB=−50mA −0.
9 −1.
2 V Collector to Base Breakdown Voltage V(BR)CBO IC=−10μA, IE=0A −50 V Collecto...


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