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SMUN5330DW

SeCoS
Part Number SMUN5330DW
Manufacturer SeCoS
Description NPN / PNP Digital Small Signal Transistors
Published Apr 1, 2016
Detailed Description Elektronische Bauelemente SMUN5311DW Series NPN / PNP Digital Small Signal Transistors RoHS Compliant Product A suffix...
Datasheet PDF File SMUN5330DW PDF File

SMUN5330DW
SMUN5330DW


Overview
Elektronische Bauelemente SMUN5311DW Series NPN / PNP Digital Small Signal Transistors RoHS Compliant Product A suffix of “-C” indicates halogen-free.
DESCRIPTION The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device.
In the SMUN5311DW series, two complementary BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium.
SOT-363 A E L B FEATURE Simplifies circuit design Reduces board space Reduces component count Available in 8 mm, 7 inch/3000 unit tape and reel F CH DG K J REF.
A B C D E F Millimeter Min.
Max.
2.
00 2.
15 2.
20 2.
45 1.
15 1.
35 0.
90 1.
10 1.
20 1.
40 0.
15 0.
35 REF.
G H J K L Millimeter Min.
Max.
0.
100 REF.
0.
525 REF.
0.
08 0.
15 8° 0.
650 TYP.
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted) Parameter Symbol Value Unit Collector - Base Voltage VCBO 50 Vdc Collector - Emitter Voltage VCEO 50 Vdc Collector Currrent – Continuous IC 100 mAdc One Junction Heated Thermal Characteristics Total Device Dissipation, TA=25°C Total Device Dissipation, Derate above 25°C Thermal Resistance, Junction to Ambient PD RθJA 187(1) 256(2) 1.
5(1) 2.
0(2) 670(1) 490(2) mW mW/°C °C/W Both Junction Heated Thermal Characteristics Total Device Dissipation, TA=25°C Total Device Dissipation, Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead PD RθJA RθJL 250(1) 385(2) 2.
0(1) 3.
0(2) 493(1) 325(2) 188(1) 208(2) mW mW/°C °C/W °C/W Junction Temperature & Storage Temperature TJ,TSTG Note: 1.
FR-4 @ minimum pad 2.
FR-4 @ 1.
0 x 1.
0 inch pad ...


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