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SGL0263Z

RF Micro Devices
Part Number SGL0263Z
Manufacturer RF Micro Devices
Description high performance SiGe HBT MMIC amplifier
Published Apr 1, 2016
Detailed Description SGL0263Z 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier SGL0263Z 1400MHz to 2500MHz SILICON GERMA...
Datasheet PDF File SGL0263Z PDF File

SGL0263Z
SGL0263Z


Overview
SGL0263Z 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier SGL0263Z 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50GHz.
This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.
5V.
The SGL0263Z has been characterized at VD=3V for low power and 4V for medium power applications.
Only two DCblocking capacitors, 2 input matching components, a bias resistor, and an optional RF choke are required for operation from 1400MHz to 2500MHz.
Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT Temperature Compensation Circuit RF In VS RF Out / VS Features  High Input/Output Intercept  Low Noise Figure: 1.
3dB typ.
at 1900MHz  Low Power Consumption...



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