DatasheetsPDF.com

SPA1118Z

RF Micro Devices
Part Number SPA1118Z
Manufacturer RF Micro Devices
Description POWER AMPLIFIER
Published Apr 1, 2016
Detailed Description SPA1118Z 850 MHz 1Watt Power Amplifier with Active Bias SPA1118Z 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Packag...
Datasheet PDF File SPA1118Z PDF File

SPA1118Z
SPA1118Z

Overview
SPA1118Z 850 MHz 1Watt Power Amplifier with Active Bias SPA1118Z 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.
These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band.
Its high linearity makes it an ideal choice for wireless data and digital applications.
Optimum Tec...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)