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TGA2627-SM

TriQuint Semiconductor
Part Number TGA2627-SM
Manufacturer TriQuint Semiconductor
Description GaN Driver Amplifier
Published Apr 2, 2016
Detailed Description Applications • Commercial and Military Radar • Communications • Electronic Warfare (EW) TGA2627-SM 6 - 12 GHz GaN Drive...
Datasheet PDF File TGA2627-SM PDF File

TGA2627-SM
TGA2627-SM

Overview
Applications • Commercial and Military Radar • Communications • Electronic Warfare (EW) TGA2627-SM 6 - 12 GHz GaN Driver Amplifier Product Features • Frequency Range: 6 - 12 GHz • Push-Pull Configuration • Low Harmonic Content; ≤ -40 dBc at Psat • Small Signal Gain: > 27 dB • Power: > 32 dBm • PAE: > 15 % • IM3: < -20 dBc • Input Return Loss > 15 dB • Output Return Loss > 10 dB • Bias: VD = 25 V, IDQ = 200 mA • Package Dimensions: 5.
0 x 5.
0 x 1.
42 mm General Description TriQuint's TGA2627-SM is a push-pull driver amplifier fabricated on TriQuint's TQGaN25 0.
25um GaN on SiC production process.
The TGA2627-SM operates from 6 to 12 GHz and provides 32 dBm of output power with 18 dB of large signal gain and greater than 20 % poweradded efficiency.
The push-pull topology yields > 40dB of harmonic suppression at Psat.
Using GaN MMIC technology and air-cavity ceramic QFN packaging, the TGA2627-SM provides a low cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA.
It can also serve as the output power amplifier on lower power architectures.
The TGA2627-SM is offered in a 5x5 mm air-cavity QFN with an aluminum nitride base and LCP lid.
It is wellmatched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration.
Lead-Free & RoHS compliant.
Evaluation Boards are available on request.
Functional Block Diagram Pad Configuration Pad Number 1-4, 6-9,11, 13, 15-19, 21-26, 28, 30, 32 5 10, 31 12, 29 14, 27 20 Symbol GND RF Input VG12 VD VG3 RF Output Ordering Information Part ECCN TGA2627-SM EAR99 Description 6 -12 GHz GaN Driver Amplifier Preliminary Datasheet: Rev - 09-05-14 © 2014 TriQuint - 1 of 16 - Disclaimer: Subject to change without notice www.
triquint.
com Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Limits (VG) Drain Current (ID) Gate Current (IG @TCH = 200 °C) Power Dissipation, 85 °C (Pdiss) Input Power, CW, 50 Ω 1 Inp...


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