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SSG4N10E

SeCoS
Part Number SSG4N10E
Manufacturer SeCoS
Description Dual-N Enhancement Mode Power MOSFET
Published Apr 4, 2016
Detailed Description Elektronische Bauelemente SSG4N10E 4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product...
Datasheet PDF File SSG4N10E PDF File

SSG4N10E
SSG4N10E

Overview
Elektronische Bauelemente SSG4N10E 4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4N10E provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
FEATURES Low on-resistance Simple Drive Requirement Double-N MosFET Package SOP-8 LD M AC N JK HG B FE MARKING CODE 4N10ESS = Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13’ inch Dimensions in millimeters REF.
A B C D E F G Millimeter Min.
Max.
5.
80 6.
20 4.
80 5.
00 3.
80 4.
00 0° 8° 0.
40 0.
90 0.
19 0.
25 1.
27 TYP.
REF.
H J K L M N Millimeter Min.
Max.
0.
35 0.
49 0.
375 REF.
45° 1.
35 1.
75 0.
10 0.
25 0.
25 REF.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS Ratings 100 Gate-Source Voltage VGS ±20 Continuous Drain Current@ VGS =10V 1 Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 TA = 25°C TA = 70°C ID IDM EAS 4 3.
1 15 9 Avalanche Current Power Dissipation@ TA=25°C 4 IAS 6 PD 1.
5 Operating Junction & Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Ratings Thermal Resistance Junction-ambient (Max.
) 1 Thermal Resistance Junction-Case (Max.
) 1 RθJA RθJC 85 50 Unit V V A A mJ A W °C °C / W °C / W http://www.
SeCoSGmbH.
com/ 21-May-2014 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SSG4N10E 4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Static Drain-Source Breakdown Voltage BVDSS 100 - - V Gate-Threshold Voltage VGS(th) 1 - 3V Gate-Body Leakage IGSS - - ±10 µA Zero Gate Voltage Drain Current -- 1 IDSS µA - - 30 Drain-Source On-Resistance 2 - - 120 RDS(ON) mΩ - - 135 Gate Resistance Rg - 2.
5 - Ω Total Gate ...


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