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RFN6BM2D

Rohm
Part Number RFN6BM2D
Manufacturer Rohm
Description Super Fast Recovery Diode
Published Apr 5, 2016
Detailed Description Super Fast Recovery Diode RFN6BM2D Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) Land Size Figur...
Datasheet PDF File RFN6BM2D PDF File

RFN6BM2D
RFN6BM2D

Overview
Super Fast Recovery Diode RFN6BM2D Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.
0 3.
0 2.
0 6.
0 Application General rectification 1 Features 1) Cathode common dual type 2) Low switching loss 3) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Construction Silicon epitaxial planar type Taping Dimensions (Unit : mm) 1.
6 1.
6 TO-252 2.
3 2.
3 Structure Cathode Anode Anode Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
5 200 V Reverse voltage Average rectified foward current Forward current surge peak Operating junction temperature VR Io IFSM Tj Direct voltage 60Hz half sin wave , Resistive load, 1/2Io per diode Tc=106°C 60Hz half sin wave, Non-repetitive at Tj=25°C, per diode - 200 6 40 150 V A A °C Storage temperature Tstg - 55 to 150 °C Electrical Characteristics (Tj = 25°C, per diode) Parameter Symbol Conditions Min.
Typ.
Max.
Unit Forward voltage VF IF=3A - 0.
90 0.
98 V Reverse current IR VR=200V - 0.
05 10 A Reverse recovery time trr IF=0.
5A, IR=1A, Irr=0.
25×IR - 12 25 ns Thermal resistance Rth(j-c) Junction to case - - 6.
0 °C / W www.
rohm.
com © 2016 ROHM Co.
, Ltd.
All rights reserved.
1/4 2018.
12 - Rev.
C RFN6BM2D Electrical Characteristic Curves Datasheet FORWARD CURRENT : IF(A) 100 10 1 Tj = 150°C Tj = 125°C 0.
1 Tj = 75°C 0.
01 0 Tj = 25°C per diode 500 1000 1500 2000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR(nA) 10000 1000 Tj = 150°C 100 Tj = 125°C Tj = 75°C 10 Tj = 25°C 1 0.
1 0 per diode 50 100 150 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 200 CAPACITANCE BETWEEN TERMINALS : Ct(pF) PEAK SURGE FORWARD CURRENT : IFSM(A) 1000 100 f = 1MHz Ta = 25°C per diode 1000 100 IFSM 8.
3ms 8.
3ms 1cyc.
10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 10 Tj = 25°C per diode 1 1 10 ...


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