N-Channel MOSFET
Description
Product Summary
V(BR)DSS 20V
RDS(on)
320mΩ @ VGS= 4.5V 500mΩ @ VGS= 2.5V 1000mΩ @ VGS= 1.8V
ID max TA = +25°C
1.0A 0.65A 0.4A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Load switch
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