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HCP65R360S

Part Number	HCP65R360S
Manufacturer	SemiHow
Description	650V N-Channel Super Junction MOSFET
Published	Apr 8, 2016
Detailed Description	HCP65R360S HCP65R360S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugge...
Datasheet	HCP65R360S PDF File

Overview

HCP65R360S HCP65R360S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ = 0.
32 ȍ ID = 11 A TO-220 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed ...

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HCP65R360S 650V N-Channel Super Junction MOSFET - SemiHow

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