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HCS60R750V

Part Number	HCS60R750V
Manufacturer	SemiHow
Description	N-Channel Super Junction MOSFET
Published	Apr 8, 2016
Detailed Description	HCS60R750V HCS60R750V 600V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugge...
Datasheet	HCS60R750V PDF File

Overview

HCS60R750V HCS60R750V 600V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ ȍ ID = 7 A TO-220F 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25୅) - Derate above 25୅ 600 7* 4.
4* 21* ρ30 90 4 0.
5 32 0.
26 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RșJC RșJA Parameter Junction-to-Case Junction-to-Ambient Typ.
--- Max.
3.
9 60.
5 Units V A A A V mJ A mJ W W/୅ ୅ ୅ Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡ HCS60R750V Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 4.
4 A 2.
5 -- gFS Forward Transconductance Off Characteristics VDS = 10, ID = 4.
4 A -- BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125୅ VGS = ρ20 V, VDS = 0 V 600 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse...

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HCS60R750V N-Channel Super Junction MOSFET - SemiHow

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