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BC847S

WEITRON
Part Number BC847S
Manufacturer WEITRON
Description Dual General Purpose Transistor
Published Apr 8, 2016
Detailed Description Dual General Purpose Transistor NPN Silicon P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collecto...
Datasheet PDF File BC847S PDF File

BC847S
BC847S

Overview
Dual General Purpose Transistor NPN Silicon P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Device Marking BC847S=1C Symbol VCEO VCBO VEBO IC Symbol PD TJ Tstg Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Off Characteristics Collector-Emitter Breakdown Voltage (IC=10mA ,I B=0) Collector-Base Breakdown Voltage (IC=10 µA ,IE=0) Emitter-Base Breakdown Voltage (IE=10 µA , IC=0) BC847S 3 21 45 6 NPN+NPN 6 54 123 SOT -363(SC-88) Value 45 50 6 200 Unit V V V mA Max 200 +150 -55 to +150 Unit mW °C °C Symbol Min Max Unit V(BR)CEO V(BR)CBO V(BR)EBO 45 50 6 - V V V WEITRON http://www.
weitron.
com.
tw 1/3 05-Feb-07 BC847S Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP On Characterist...


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