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L2SA1365GLT3G

Leshan Radio Company
Part Number L2SA1365GLT3G
Manufacturer Leshan Radio Company
Description General Purpose Transistor
Published Apr 9, 2016
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial ...
Datasheet PDF File L2SA1365GLT3G PDF File

L2SA1365GLT3G
L2SA1365GLT3G

Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.
EATURE ●Small collector to emitter saturation voltage.
VCE(sat)=-0.
2V typ ●Excellent linearity of DC forward current gain.
●Super mini package for easy mounting ●High collector current ICM=-1A ●High gain band width product fT =180MHz typ ●We declare that the material of product compliance with RoHS requirements.
●We declare that the material of product is ROHS compliant ●S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, AEC-Q101 Qualified and PPAP Capa...


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