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DMN3190LDW

Diodes
Part Number DMN3190LDW
Manufacturer Diodes
Description Dual N-Channel MOSFET
Published Apr 17, 2016
Detailed Description DMN3190LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) (MAX) 190mΩ @ VGS = 10V 335mΩ @ V...
Datasheet PDF File DMN3190LDW PDF File

DMN3190LDW
DMN3190LDW


Overview
DMN3190LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) (MAX) 190mΩ @ VGS = 10V 335mΩ @ VGS = 4.
5V Package SOT363 ID (MAX) TA = +25°C 1A 0.
75A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications  Motor Control  Power Management Functions  Load Switch SOT363 Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
“Green” Device (Note 3)  For automotive applications requiring specific change control (i.
e.
parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.
https://www.
diodes.
com/quality/product-definitions/ Mechanical Data  Case: SOT363  C...



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