N-Channel MOSFET
Description
Product Summary
V(BR)DSS 30V
RDS(on)
760m @ VGS = 4.5V 930m @ VGS = 2.5V 1500mΩ @ VGS = 1.8V
ID TA = +25°C
0.65A
0.58A
0.45A
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Load swit...
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