N-Channel MOSFET
Description
HFP5N80
May 2013
HFP5N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ ȍ ID = 5.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...
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