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AUIRF7769L2TR

Infineon
Part Number AUIRF7769L2TR
Manufacturer Infineon
Description Power MOSFET
Published Apr 18, 2016
Detailed Description   AUTOMOTIVE GRADE AUIRF7769L2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and othe...
Datasheet PDF File AUIRF7769L2TR PDF File

AUIRF7769L2TR
AUIRF7769L2TR

Overview
  AUTOMOTIVE GRADE AUIRF7769L2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications  Exceptionally Small Footprint and Low Profile  High Power Density  Low Parasitic Parameters  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Capability for Robustness and Reliability  Lead free, RoHS and Halogen free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ.
max.
ID (Silicon Limited) Qg (typical) 100V 2.
8m 3.
5m 124A 200nC   D S S GS S S S D S S   Applicable DirectFET® Outline and Substrate Outline  L8 DirectFET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRF7769L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.
7 mm profile.
The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential.
The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF7769L2TR to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area.
Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability.
These features combine to make this MO...


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