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AUIRFSL4115

Infineon
Part Number AUIRFSL4115
Manufacturer Infineon
Description Power MOSFET
Published Apr 18, 2016
Detailed Description   AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fas...
Datasheet PDF File AUIRFSL4115 PDF File

AUIRFSL4115
AUIRFSL4115


Overview
  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   AUIRFS4115 AUIRFSL4115 HEXFET® Power MOSFET VDSS 150V RDS(on) typ.
max.
10.
3m 12.
1m ID 99A DD Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications S G D2Pak AUIRFS4115 G Gate S GD TO-262 AUIRFSL4115 D Drain S Source Base part number AUIRFSL4115 AUIRFS4115 Package Type TO-262 D2-Pak Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRFSL4115 AUIRFS4115 AUIRFS4115TRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt EAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery  Single Pulse Avalanche Energy (Thermally Limited)...



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