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KTD1898

Part Number	KTD1898
Manufacturer	WEJ
Description	NPN Transistor
Published	Apr 18, 2016
Detailed Description	RoHS KTD1898 KTD1898 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM:...
Datasheet	KTD1898 PDF File

Overview

RoHS KTD1898 KTD1898 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .
,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 100 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1.
BASE 2.
COLLECTOR 3.
EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain Collector-emitter saturation voltage ETransition frequency LCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob ...

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