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VB60170G

Vishay
Part Number VB60170G
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Apr 18, 2016
Detailed Description www.vishay.com VB60170G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low...
Datasheet PDF File VB60170G PDF File

VB60170G
VB60170G

Overview
www.
vishay.
com VB60170G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
50 V at IF = 5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 VB60170G PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max...


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