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CGH40180PP

Cree
Part Number CGH40180PP
Manufacturer Cree
Description RF Power GaN HEMT
Published Apr 19, 2016
Detailed Description CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility tran...
Datasheet PDF File CGH40180PP PDF File

CGH40180PP
CGH40180PP

Overview
CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits.
The transistor is available in a 4-lead flange package.
PackaPgNe:TCyGpeHs4:04148001P9P9 FEATURES • Up to 2.
5 GHz Operation • 20 dB Small Signal Gain at 1.
0 GHz • 15 dB Small Signal Gain at 2.
0 GHz • 220 W typical PSAT • 70 % Efficiency at PSAT • 28 V Operation APPLIC...


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