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CGHV14250

Cree
Part Number CGHV14250
Manufacturer Cree
Description GaN HEMT
Published Apr 19, 2016
Detailed Description CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high el...
Datasheet PDF File CGHV14250 PDF File

CGHV14250
CGHV14250

Overview
CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.
2 - 1.
4 GHz L-Band radar amplifier applications.
The transistor could be utilized for band specific applications ranging from UHF through 1800 MHz.
The package options are ceramic/metal flange and pill package.
Package Type:P4N4:0C1G62H,V41440215601 Typical Performance Over 1.
2-1.
4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.
2 GHz 1.
25 GHz 1.
3 GHz 1.
35 GHz Output Power 365 365 350 310 1.
4 GHz 330 Gain 18.
6 18.
6 18.
4 17.
9 18.
2 Drain Efficiency 80 80 77 74 76 Note: Measured in the CGHV14250-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 37 dBm.
Units W dB % Features • Reference design amplifier 1.
2 - 1.
4 GHz Operation • FET Tuning range UHF through 1800 MHz...


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