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CGHV31500F

Cree
Part Number CGHV31500F
Manufacturer Cree
Description GaN HEMT
Published Apr 19, 2016
Detailed Description PRELIMINARY CGHV31500F 500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH...
Datasheet PDF File CGHV31500F PDF File

CGHV31500F
CGHV31500F

Overview
PRELIMINARY CGHV31500F 500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.
7 - 3.
1 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217.
PN: Package TCyGpHeV: 43410520107F Typical Performance Over 2.
7-3.
1 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.
7 GHz 2.
9 GHz 3.
1 GHz Output Power 665 705 645 Gain 13.
2 13.
5 13.
1 Drain Efficiency 66 68 62 Note: Measured in the ...


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