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TSM900N10

Taiwan Semiconductor
Part Number TSM900N10
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description TSM900N10 Taiwan Semiconductor N-Channel Power MOSFET 100V, 15A, 90mΩ FEATURES ● 100% avalanche tested ● Low gate char...
Datasheet PDF File TSM900N10 PDF File

TSM900N10
TSM900N10

Overview
TSM900N10 Taiwan Semiconductor N-Channel Power MOSFET 100V, 15A, 90mΩ FEATURES ● 100% avalanche tested ● Low gate charge for fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Networking ● Load Switching ● LED Lighting Control ● AC-DC Secondary Rectification TO-251S (IPAK SL) KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.
5V Qg 100 90 100 9.
3 V mΩ nC TO-252 (DPAK) Notes: Moisture sensitivity level: level 3.
Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3) Operating Junction and Storage Temperature Range VDS VGS ID IDM PDTOT EAS IAS TJ, TSTG 100 ±20 15 9.
5 60 50 18 6 - 55 to +150 UNIT V V A A W mJ A °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 2.
5 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances.
The case thermal reference is defined at the solder mounting surface of the drain pins.
RӨJA is guaranteed by design while RӨCA is determined by the user’s board design.
RӨJA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000173 1 Version: A15 TSM900N10 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static (Note 4) CONDITIONS SYMBOL MIN Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 100 Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.
2 Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V IDSS -- Drain-Source On-State Resistance Dynamic (Note 5) VGS = 10V, ID = 5A...


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