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BC807-40

Taiwan Semiconductor
Part Number BC807-40
Manufacturer Taiwan Semiconductor
Description PNP Transistor
Published Apr 24, 2016
Detailed Description BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideal...
Datasheet PDF File BC807-40 PDF File

BC807-40
BC807-40

Overview
BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.
3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications - Complementary NPN type available (BC817) MECHANICAL DATA - Case: SOT- 23, Molded plastic - Terminal: Solderable per MIL-STD-202, method 208 - Case material: Molded plastic, UL flammability classification rating 94V-0 - Moisture sensitivity: Level 1 per J-STD-020C - Lead free plating - Weight: 0.
008grams (approximately) SOT-23 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation Collector Current - Continuous Junction Temperature Storage Temperature Range PD IC TJ TSTG 0.
3 -0.
5 150 -55 to + 150 UNIT W A °C °C PARAMETER SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency 807-16 IC = -10 µA IE = 0 IC = -10 mA IB = 0 IE = -1 µA IC = 0 VCB = -45 V IE = 0 VCB = -40 V IB = 0 VEB = -4 V IC = 0 at IC = -500mA IB = 50 mA at IC = -500 mA IB = 50 mA VCE = -5 V IC = -10 mA f = 50MHz VCBO VCEO VEBO ICBO IEBO VCE(sat) VBE(sat) fT DC Current Gain 807-25 807-40 VCE = -1 V IC = -100 mA hFE(1) VALUE -50 -45 -5 -0.
1 -0.
2 -0.
1 -0.
7 -1.
2 80 100 250 160 400 250 600 UNIT V V V µA µA µA V V MHz Document Number: DS_S1404007 Version: F14 PD, Power Dissipation (mW) Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Fig.
1 Power Derating Curve 400 See Note 1 300 200 100 0 0 50 100 150 200 TSB, Substrate Temperature (oC) -IC, Collector Current (mA) 1000 Fig.
3 Collector Sat Voltage VS.
Collector Current - 50 oC 100 25 oC 10 150 oC Typical - - - - - - - - Limits at TA = 25 oC -IC / -IB = 10 1 0.
1 0 0.
1 0.
2 0.
3 0.
4 -VCESAT ...


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