RU40E80L
N-Channel Advanced Power MOSFET
Features
40V/80A, RDS (ON) =4.5mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=4.5V Low RDS (ON) Super High Dense Cell Design ESD protected 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Applications
Switching Applications
Pin Description
D
G S
TO252
D G
Absolute Maximum Ratin...