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TIP31CJ3

CYStech
Part Number TIP31CJ3
Manufacturer CYStech
Description 3A NPN Epitaxial Planar Power Transistor
Published Apr 27, 2016
Detailed Description CYStech Electronics Corp. 3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Spec. No. : C609J3 Issued Date : 2014.06.06...
Datasheet PDF File TIP31CJ3 PDF File

TIP31CJ3
TIP31CJ3

Overview
CYStech Electronics Corp.
3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Spec.
No.
: C609J3 Issued Date : 2014.
06.
06 Revised Date : Page No.
: 1/6 Description TIP31CJ3 is designed for use in general purpose amplifier and switching applications.
Features • Low collector-emitter saturation voltage, VCE(sat) = 0.
5V(max) @ IC = 3A • High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) • High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA • Pb-free lead plating and halogen-free package Symbol TIP31CJ3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device TIP31CJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3:2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name TIP31CJ3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C609J3 Issued Date : 2014.
06.
06 Revised Date : Page No.
: 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating Junction and Storage Temperature Range Note : 1.
Single Pulse , Pw≦300μs, Duty≦2%.
Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj ; Tstg Limits 200 100 5 3 5 (Note 1) 1 1.
56 15 80 8.
3 -65~+150 Unit V V V A A W °C/W °C/W °C Characteristics (Ta=25°C) Symbol *BVCEO(SUS) ICBO ICEO ICES IEBO *VCE(sat) *VBE(on) *hFE *hFE fT Min.
100 25 10 3 Typ.
- Max.
100 1 1 100 0.
5 1.
2 50 - Unit V nA μA μA nA V V MHz Test Conditions IC=30mA, IB=0 VCB=200V, IC=0 VCE=100V, IB=0 VCE=100V, VBE=0 VEB=5V, IC=0 IC=3A, IB=375mA VCE=4V, IC=3A VCE=4V, IC=1A VCE=4V, IC=3A VCE=10V, IC=500mA, f=1MHz *Pul...


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