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NX5313EK

Part Number	NX5313EK
Manufacturer	Renesas
Description	LASER DIODE
Published	Apr 28, 2016
Detailed Description	PRELIMINARY DATA SHEET LASER DIODE NX5313 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTIO...
Datasheet	NX5313EK PDF File

Overview

PRELIMINARY DATA SHEET LASER DIODE NX5313 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD.
These devices are designed for application up to 1.
25 Gb/s.
APPLICATION • FTTH PON (B-PON, G-PON, GE-PON 10 km) system FEATURES • Optical output power Po = 13.
0 mW • Low threshold current lth = 6 mA • Differential Efficiency ηd = 0.
5 W/A • Wide operating temperature range TC = −40 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.
6 mm • Focal point 6.
35 mm • LD beam angle optimized for 8 degree angled SMF The information in this ...

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