Silicon N-Channel MOS FET
Description
RJK0631JPD
Silicon N Channel Power MOS FET High Speed Power Switching
Features
For Automotive application Low on-resistance : RDS(on) = 12 mΩ typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ AEC-Q101 compliant
Outline
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S))
4 123
1G
Preliminary Datasheet
R07DS0252EJ0...
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