IGBT
Description
RJP60V0DPM-80
600V - 22A - IGBT Application: Inverter
Features
High breakdown-voltage Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) Short circuit withstand time (6 μs typ.) Trench gate and thin wafer technology (G6H series)
Outline
RENESAS Package code: PRSS0003ZD-A (Package name: TO-3PF)
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Similar Datasheet
- RJP60V0DPM-80 IGBT - Renesas