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LP2301BLT1G

LRC
Part Number LP2301BLT1G
Manufacturer LRC
Description P-Channel MOSFET
Published May 1, 2016
Detailed Description LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(O...
Datasheet PDF File LP2301BLT1G PDF File

LP2301BLT1G
LP2301BLT1G

Overview
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.
5V, Ids@-2.
8A = 100 mΩ RDS(ON), Vgs@-2.
5V, Ids@-2.
0A = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device Ordering Information Device Marking LP2301BLT1G 0B Shipping 3000/Tape & Reel LP2301BLT3G 0B 10,000/Tape & Reel LP2301BLT1G 3 1 2 SOT– 23 (TO–236AB) 3D G 1 S 2 Maximum Ratings and Thermal Characteristics (TA = 25o...


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